P-26: High Capacity Memory using Oxide Based Schottky Diode...

SID Symposium Digest of Technical Papers 2015 / 06 Vol. 46; Iss. 1

P-26: High Capacity Memory using Oxide Based Schottky Diode and Unipolar Resistive Array

Fan, Yang-Shun, Chang, Chih-Hsiang, Zheng, Guang-Ting, Chang, Che-Chia, Liu, Po-Tsun
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
46
Language:
english
Journal:
SID Symposium Digest of Technical Papers
DOI:
10.1002/sdtp.10063
Date:
June, 2015
File:
PDF, 1.13 MB
english, 2015
Conversion to is in progress
Conversion to is failed