The role of the Ti and Mo barrier layer in Ti/Al metallization to AlGaN/GaN heterostructures at identical process conditions: a structural and chemical characterization
Chandran, Narendraraj, Kolakieva, Lilyana, Kakanakov, Roumen, Polychroniadis, E KVolume:
30
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/30/11/115011
Date:
November, 2015
File:
PDF, 2.12 MB
english, 2015