In-situ wafer bowing measurements of GaN...

Chinese Physics B 2015 / 09 Vol. 24; Iss. 9

In-situ wafer bowing measurements of GaN grown on Si (111) substrate by reflectivity mapping in metal organic chemical vapor deposition system

Yang, Yi-Bin, Liu, Ming-Gang, Chen, Wei-Jie, Han, Xiao-Biao, Chen, Jie, Lin, Xiu-Qi, Lin, Jia-Li, Luo, Hui, Liao, Qiang, Zang, Wen-Jie, Chen, Yin-Song, Qiu, Yun-Ling, Wu, Zhi-Sheng, Liu, Yang, Zhang,
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Volume:
24
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/24/9/096103
Date:
September, 2015
File:
PDF, 529 KB
english, 2015
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