A high performance InAlN/GaN HEMT with low R on and gate leakage
Ma, Chunlei, Gu, Guodong, Lü, YuanjieVolume:
37
Language:
english
Journal:
Journal of Semiconductors
DOI:
10.1088/1674-4926/37/2/024009
Date:
February, 2016
File:
PDF, 348 KB
english, 2016