SPIE Proceedings [SPIE Physical Concepts of Materials for Novel Optoelectronic Device Applications - Aachen, Federal Republic of Germany (Sunday 28 October 1990)] Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization - Electronic properties of Si-doped nipi structures in GaAs
Fong, C. Y., Gallup, R. F., Nelson, Jeffrey S., Razeghi, ManijehVolume:
1361
Year:
1991
Language:
english
DOI:
10.1117/12.24414
File:
PDF, 511 KB
english, 1991