50-NM SELF-ALIGNED HIGH ELECTRON-MOBILITY TRANSISTORS ON GaAs SUBSTRATES WITH EXTREMELY HIGH EXTRINSIC TRANSCONDUCTANCE AND HIGH GAIN
XU, DONG, YANG, XIAOPING, SEEKELL, P., PLEASANT, L. MT., ISAAK, R., KONG, W.M.T., CUEVA, G., CHU, K., MOHNKERN, L., SCHLESINGER, L., STEDMAN, R., KARIMY, H., CARNEVALE, R., VERA, A., GOLJA, B., DUH, KVolume:
20
Language:
english
Journal:
International Journal of High Speed Electronics and Systems
DOI:
10.1142/s0129156411006672
Date:
September, 2011
File:
PDF, 115 KB
english, 2011