Porous Quaternary Al 0.1 In 0.1 Ga 0.8 N Film Formation via Photoelectrochemical Etching in HF:C 2 H 5 OH Electrolyte
Lim, Way Foong, Quah, Hock Jin, Hassan, Zainuriah, Radzali, Rosfariza, Zainal, Norzaini, Yam, Fong Kwong, Salvador, P. A.Volume:
99
Language:
english
Journal:
Journal of the American Ceramic Society
DOI:
10.1111/jace.14241
Date:
July, 2016
File:
PDF, 1.31 MB
english, 2016