SPIE Proceedings [SPIE SPIE Advanced Lithography - San Jose, California (Sunday 21 February 2010)] Extreme Ultraviolet (EUV) Lithography - Printability of extreme ultraviolet lithography mask pattern defects for 22-40 nm half-pitch features
La Fontaine, Bruno M., Kloster, Grant M., Liang, Ted, Younkin, Todd R., Putna, Ernisse S., Caudillo, Roman, Son, Il-SeokVolume:
7636
Year:
2010
Language:
english
DOI:
10.1117/12.845740
File:
PDF, 394 KB
english, 2010