n-AlGaAs/p-GaAs/n-GaN HETEROJUNCTION BIPOLAR TRANSISTOR:...

International Journal of High Speed Electronics and Systems 2004 / 03 Vol. 14; Iss. 1

n-AlGaAs/p-GaAs/n-GaN HETEROJUNCTION BIPOLAR TRANSISTOR: THE FIRST TRANSISTOR FORMED VIA WAFER FUSION

ESTRADA, SARAH, HU, EVELYN, MISHRA, UMESH
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Volume:
14
Language:
english
Journal:
International Journal of High Speed Electronics and Systems
DOI:
10.1142/s0129156404002338
Date:
March, 2004
File:
PDF, 2.78 MB
english, 2004
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