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SPIE Proceedings [SPIE Physical Concepts of Materials for Novel Optoelectronic Device Applications - Aachen, Federal Republic of Germany (Sunday 28 October 1990)] Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization - Far-IR studies of moderately doped molecular beam epitaxy grown GaAs on Si(100)
Morley, Stefan, Eickhoff, Thomas, Zahn, Dietrich R. T., Richter, W., Woolf, D., Westwood, David I., Williams, R. H., Razeghi, ManijehVolume:
1361
Year:
1991
Language:
english
DOI:
10.1117/12.24397
File:
PDF, 484 KB
english, 1991