Modeling of a triple reduced surface field silicon-on-insulator lateral double-diffused metal–oxide–semiconductor field-effect transistor with low on-state resistance
Wang, Yu-Ru, Liu, Yi-He, Lin, Zhao-Jiang, Fang, Dong, Li, Cheng-Zhou, Qiao, Ming, Zhang, BoVolume:
25
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/25/2/027305
Date:
February, 2016
File:
PDF, 446 KB
english, 2016