Over 1 W record-peak-power operation of a 338 nm AlGaN multiple-quantum-well laser diode on a GaN substrate
Taketomi, Hiroyuki, Aoki, Yuta, Takagi, Yasufumi, Sugiyama, Atsushi, Kuwabara, Masakazu, Yoshida, HarumasaVolume:
55
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.55.05FJ05
Date:
May, 2016
File:
PDF, 984 KB
english, 2016