Excess carrier lifetime and strain distributions in a...

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physica status solidi (a) 2013 / 06

Excess carrier lifetime and strain distributions in a 3C-SiC wafer grown on an undulant Si substrate

Kato, Masashi, Yoshida, Atsushi, Ichimura, Masaya, Nagasawa, Hiroyuki
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Language:
english
Journal:
physica status solidi (a)
DOI:
10.1002/pssa.201329015
Date:
June, 2013
File:
PDF, 811 KB
english, 2013
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