Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes
Mandurrino, Marco, Verzellesi, Giovanni, Goano, Michele, Vallone, Marco, Bertazzi, Francesco, Ghione, Giovanni, Meneghini, Matteo, Meneghesso, Gaudenzio, Zanoni, EnricoVolume:
212
Language:
english
Journal:
physica status solidi (a)
DOI:
10.1002/pssa.201431743
Date:
May, 2015
File:
PDF, 421 KB
english, 2015