In situ low temperature As-doping of Ge films...

Semiconductor Science and Technology 2015 / 10 Vol. 30; Iss. 10

In situ low temperature As-doping of Ge films using As(SiH 3 ) 3 and As(GeH 3 ) 3 : fundamental properties and device prototypes

Xu, Chi, Gallagher, J D, Wallace, P M, Senaratne, C L, Sims, P, Menéndez, J, Kouvetakis, J
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Volume:
30
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/30/10/105028
Date:
October, 2015
File:
PDF, 1.43 MB
english, 2015
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