Influence of multi-deposition multi-annealing on...

Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics of PMOS with high- k /metal gate last process

Wang, Yan-Rong, Yang, Hong, Xu, Hao, Wang, Xiao-Lei, Luo, Wei-Chun, Qi, Lu-Wei, Zhang, Shu-Xiang, Wang, Wen-Wu, Yan, Jiang, Zhu, Hui-Long, Zhao, Chao, Chen, Da-Peng, Ye, Tian-Chun
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Volume:
24
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/24/11/117306
Date:
November, 2015
File:
PDF, 548 KB
english, 2015
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