Properties of self-assembled Ge islands grown by molecular...

International Journal of Nanotechnology 2009 Vol. 6; Iss. 5/6

Properties of self-assembled Ge islands grown by molecular beam epitaxy

Ray, Samit K., Singha, Rajkumar, Das, Samaresh, Das, Kaustuv, Dhar, Achintya
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Volume:
6
Year:
2009
Language:
english
Journal:
International Journal of Nanotechnology
DOI:
10.1504/ijnt.2009.024646
File:
PDF, 3.20 MB
english, 2009
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