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Simulation, modelling and characterisation of quasi-ballistic transport in nanometer sized field effect transistors: from TCAD to atomistic simulation
Roche, Stephan, Poiroux, Thierry, Lecarval, Gilles, Barraud, Sylvain, Triozon, Francois, Persson, Martin, Niquet, Yann MichelVolume:
7
Year:
2010
Language:
english
Journal:
International Journal of Nanotechnology
DOI:
10.1504/ijnt.2010.031724
File:
PDF, 980 KB
english, 2010