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Remote interfacial dipole scattering and electron mobility degradation in Ge field-effect transistors with GeO x /Al 2 O 3 gate dielectrics
Wang, Xiaolei, Xiang, Jinjuan, Wang, Shengkai, Wang, Wenwu, Zhao, Chao, Ye, Tianchun, Xiong, Yuhua, Zhang, JingVolume:
49
Language:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/0022-3727/49/25/255104
Date:
June, 2016
File:
PDF, 1.11 MB
english, 2016