Stoichiometry of the ALD-Al 2 O 3 /4H–SiC interface by synchrotron-based XPS
Usman, Muhammad, Suvanam, Sethu Saveda, Yazdi, Milad Ghadami, Göthelid, Mats, Sultan, Muhammad, Hallén, AndersVolume:
49
Language:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/0022-3727/49/25/255308
Date:
June, 2016
File:
PDF, 1.07 MB
english, 2016