Measuring the signature of bias and temperature-dependent...

Semiconductor Science and Technology 2015 / 10 Vol. 30; Iss. 10

Measuring the signature of bias and temperature-dependent barrier heights in III-N materials using a hot electron transistor

III, Donald J Suntrup, Gupta, Geetak, Li, Haoran, Keller, Stacia, Mishra, Umesh K
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Volume:
30
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/30/10/105003
Date:
October, 2015
File:
PDF, 470 KB
english, 2015
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