Carrier behavior of HgTe under high pressure revealed by...

Chinese Physics B 2015 / 11 Vol. 24; Iss. 11

Carrier behavior of HgTe under high pressure revealed by Hall effect measurement

Hu, Ting-Jing, Cui, Xiao-Yan, Li, Xue-Fei, Wang, Jing-Shu, Lv, Xiu-Mei, Wang, Ling-Sheng, Yang, Jing-Hai, Gao, Chun-Xiao
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Volume:
24
Language:
english
Journal:
Chinese Physics B
DOI:
10.1088/1674-1056/24/11/116401
Date:
November, 2015
File:
PDF, 435 KB
english, 2015
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