Investigation of Leakage Current Mechanisms in...

Journal of Electronic Materials 2016 / 11 Vol. 45; Iss. 11

Investigation of Leakage Current Mechanisms in La2O3/SiO2/4H-SiC MOS Capacitors with Varied SiO2Thickness

Wang, Yucheng, Jia, Renxu, Zhao, Yanli, Li, Chengzhan, Zhang, Yuming
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
45
Language:
english
Journal:
Journal of Electronic Materials
DOI:
10.1007/s11664-016-4760-6
Date:
November, 2016
File:
PDF, 649 KB
english, 2016
Conversion to is in progress
Conversion to is failed