![](/img/cover-not-exists.png)
SPIE Proceedings [SPIE Physical Concepts of Materials for Novel Optoelectronic Device Applications - Aachen, Federal Republic of Germany (Sunday 28 October 1990)] Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization - Effects of TMSb/TEGa ratios on epilayer properties of gallium antimonide grown by low-pressure MOCVD
Wu, Tong S., Su, Yan-Kuin, Juang, Fuh S., Li, N. Y., Gan, K. J., Razeghi, ManijehVolume:
1361
Year:
1991
Language:
english
DOI:
10.1117/12.24388
File:
PDF, 854 KB
english, 1991