SPIE Proceedings [SPIE Integrated Optoelectronic Devices 2006 - San Jose, CA (Saturday 21 January 2006)] Gallium Nitride Materials and Devices - Growth and characterization of AlInN/GaInN quantum wells for high-speed intersubband devices at telecommunication wavelengths
Skierbiszewski, C., Litton, Cole W., Grote, James G., Cywiński, G., Siekacz, M., Morkoc, Hadis, Madhukar, Anupam, Feduniewicz-Zmuda, A., Nevou, L., Doyennette, L., Tchernycheva, M., Julien, F. H., SmaVolume:
6121
Year:
2006
Language:
english
DOI:
10.1117/12.646014
File:
PDF, 591 KB
english, 2006