Nitrogen doping of 4H-SiC by KrF excimer laser irradiation...

Japanese Journal of Applied Physics 2015 / 04 Vol. 54; Iss. 4S

Nitrogen doping of 4H-SiC by KrF excimer laser irradiation in liquid nitrogen

Ikeda, Akihiro, Marui, Daichi, Ikenoue, Hiroshi, Asano, Tanemasa
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Volume:
54
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.54.04DP02
Date:
April, 2015
File:
PDF, 624 KB
english, 2015
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