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SPIE Proceedings [SPIE Optoelectronics and High-Power Lasers & Applications - San Jose, CA (Saturday 24 January 1998)] Physics and Simulation of Optoelectronic Devices VI - Temperature dependencies of output characteristics of 1.3-μm InGaAsP/InP lasers with different profiles of p-doping
Donetsky, Dmitri V., Belenky, Gregory L., Shtengel, Gleb E., Reynolds, Jr., C. L., Kazarinov, Rudolf F., Luryi, Serge, Osinski, Marek, Blood, Peter, Ishibashi, AkiraVolume:
3283
Year:
1998
Language:
english
DOI:
10.1117/12.316692
File:
PDF, 436 KB
english, 1998