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SPIE Proceedings [SPIE SPIE OPTO: Integrated Optoelectronic Devices - San Jose, CA (Saturday 24 January 2009)] Gallium Nitride Materials and Devices IV - Employment of III-nitride/silicon heterostructures for dual-band UV/IR photodiodes
Pillai, R., Morkoç, Hadis, Litton, Cole W., Starikov, D., Boney, C., Chyi, Jen-Inn, Nanishi, Yasushi, Bensaoula, A., Piprek, Joachim, Yoon, EuijoonVolume:
7216
Year:
2009
Language:
english
DOI:
10.1117/12.810085
File:
PDF, 362 KB
english, 2009