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SPIE Proceedings [SPIE Physical Concepts of Materials for Novel Optoelectronic Device Applications - Aachen, Federal Republic of Germany (Sunday 28 October 1990)] Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications - Performances of gallium arsenide on silicon substrate photoconductive detectors
Constant, Monique T., Razeghi, Manijeh, Boussekey, Luc, Decoster, Didier J., Vilcot, Jean-PierreVolume:
1362
Year:
1990
Language:
english
DOI:
10.1117/12.24538
File:
PDF, 195 KB
english, 1990