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SPIE Proceedings [SPIE Physical Concepts of Materials for Novel Optoelectronic Device Applications - Aachen, Federal Republic of Germany (Sunday 28 October 1990)] Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications - InGaAs/GaAs interdigitated metal-semiconductor-metal (IMSM) photodetectors operational at 1.3 um grown by molecular beam epitaxy
Elman, Boris S., Razeghi, Manijeh, Chirravuri, Jagannath, Choudhury, A. N. M. M., Silletti, Andrew, Negri, Andrew J., Powers, J.Volume:
1362
Year:
1990
Language:
english
DOI:
10.1117/12.24540
File:
PDF, 355 KB
english, 1990