High electron mobility in high-polarization sub-10 nm barrier thickness InAlGaN/GaN heterostructure
Medjdoub, Farid, Kabouche, Riad, Linge, Astrid, Grimbert, Bertrand, Zegaoui, Malek, Gamarra, Piero, Lacam, Cédric, Tordjman, Maurice, di Forte-Poisson, Marie-AntoinetteVolume:
8
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/APEX.8.101001
Date:
October, 2015
File:
PDF, 1.52 MB
english, 2015