Three-center tight-binding potential model for C and Si

Physical Review B 2015 / 7 Vol. 92; Iss. 3

Three-center tight-binding potential model for C and Si

Lu, Wen-Cai, Wang, C. Z., Zhao, Li-Zhen, Qin, Wei, Ho, K. M.
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Volume:
92
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.92.035206
Date:
July, 2015
File:
PDF, 1.88 MB
english, 2015
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