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[IEEE 2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2016.4.25-2016.4.27)] 2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Low power/self-compliance of resistive switching elements modified with a conduction Ta-oxide layer through low temperature plasma oxidization of Ta thin film
Chen, Yu-Sheng, Lee, Heng-Yuan, Chen, Pang-Shiu, Lin, Y. D., Tsai, Kan-Hsueh, Hsu, C. H., Chen, W. S., Tsai, Ming-Jinn, Ku, T. K., Wang, P. H.Year:
2016
Language:
english
DOI:
10.1109/vlsi-tsa.2016.7480496
File:
PDF, 2.84 MB
english, 2016