Stress relaxation mechanism in the Si-SiO 2...

Physica status solidi 2016 / 07

Stress relaxation mechanism in the Si-SiO 2 system and its influence on the interface properties

Kropman, Daniel, Seeman, Viktor, Dolgov, Sergei, Heinmaa, Ivo, Medvid, Artur
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Language:
english
Journal:
physica status solidi (c)
DOI:
10.1002/pssc.201600051
Date:
July, 2016
File:
PDF, 509 KB
english, 2016
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