Impact of Al Doping Concentration at Channel Region on...

Materials Science Forum 2016 / 5 Vol. 858

Impact of Al Doping Concentration at Channel Region on Mobility and Threshold Voltage Instability in 4H-SiC Trench N-MOSFETs

Kutsuki, Katsuhiro, Kawaji, Sachiko, Watanabe, Yukihiko, Tsujimura, Masatoshi, Onishi, Toru, Fujiwara, Hirokazu, Yamamoto, Kensaku, Kanemura, Takashi
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Volume:
858
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.858.607
Date:
May, 2016
File:
PDF, 416 KB
english, 2016
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