Oxygen and hydrogen profiles and electrical properties of unintentionally doped gallium nitride grown by hydride vapor phase epitaxy
Garbe, Valentin, Abendroth, Barbara, Stöcker, Hartmut, Gavrilov, Arkadi, Cohen-Elias, Doron, Mehari, Shlomo, Ritter, Dan, Meyer, Dirk C.Volume:
50
Journal:
Crystal Research and Technology
DOI:
10.1002/crat.201570011
Date:
June, 2015
File:
PDF, 6.16 MB
2015