6.5 kV n-Channel 4H-SiC IGBT with Low Switching Loss...

Materials Science Forum 2016 / 5 Vol. 858

6.5 kV n-Channel 4H-SiC IGBT with Low Switching Loss Achieved by Extremely Thin Drift Layer

Watanabe, Naoki, Yoshimoto, Hiroyuki, Shima, Akio, Yamada, Renichi, Shimamoto, Yasuhiro
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Volume:
858
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.858.939
Date:
May, 2016
File:
PDF, 1.03 MB
english, 2016
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