Surface nitridation for improved dielectric/III-nitride...

physica status solidi (a) 2015 / 05 Vol. 212; Iss. 5

Surface nitridation for improved dielectric/III-nitride interfaces in GaN MIS-HEMTs (Phys. Status Solidi A 5∕2015)

Chen, Kevin J., Yang, Shu, Tang, Zhikai, Huang, Sen, Lu, Yunyou, Jiang, Qimeng, Liu, Shenghou, Liu, Cheng, Li, Baikui
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Volume:
212
Journal:
physica status solidi (a)
DOI:
10.1002/pssa.201570428
Date:
May, 2015
File:
PDF, 27.23 MB
2015
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