Room temperature PL efficiency of InGaN/GaN quantum well...

Physica status solidi 2016 / 05 Vol. 13; Iss. 5-6

Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells

Christian, George M., Hammersley, Simon, Davies, Matthew J., Dawson, Philip, Kappers, Menno J., Massabuau, Fabien C.-P., Oliver, Rachel A., Humphreys, Colin J.
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Volume:
13
Language:
english
Journal:
physica status solidi (c)
DOI:
10.1002/pssc.201510180
Date:
May, 2016
File:
PDF, 448 KB
english, 2016
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