Hydrogenation Defect Passivation for Improved Minority...

Journal of Electronic Materials 2016 / 11 Vol. 45; Iss. 11

Hydrogenation Defect Passivation for Improved Minority Carrier Lifetime in Midwavelength Ga-Free InAs/InAsSb Superlattices

Hossain, K., Höglund, L., Phinney, L. C., Golding, T. D., Wicks, G., Khoshakhlagh, A., Ting, D. Z.-Y., Soibel, A., Gunapala, S. D.
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Volume:
45
Language:
english
Journal:
Journal of Electronic Materials
DOI:
10.1007/s11664-016-4617-z
Date:
November, 2016
File:
PDF, 1.03 MB
english, 2016
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