Fabrication of Si/SiO 2 /GaN...

Japanese Journal of Applied Physics 2016 / 05 Vol. 55; Iss. 5S

Fabrication of Si/SiO 2 /GaN structure by surface-activated bonding for monolithic integration of optoelectronic devices

Tsuchiyama, Kazuaki, Yamane, Keisuke, Sekiguchi, Hiroto, Okada, Hiroshi, Wakahara, Akihiro
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Volume:
55
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.7567/JJAP.55.05FL01
Date:
May, 2016
File:
PDF, 1.52 MB
english, 2016
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