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Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source
Novikov, S.V., Staddon, C.R., Sahonta, S.-L., Oliver, R.A., Humphreys, C.J., Foxon, C.T.Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2016.07.038
Date:
July, 2016
File:
PDF, 672 KB
english, 2016