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Nearly Ideal Current–Voltage Characteristics of Schottky Barrier Diodes Formed on Hydride-Vapor-Phase-Epitaxy-Grown GaN Free-Standing Substrates
Suda, Jun, Yamaji, Kazuki, Hayashi, Yuichirou, Kimoto, Tsunenobu, Shimoyama, Kenji, Namita, Hideo, Nagao, SatoruVolume:
3
Language:
english
Journal:
Applied Physics Express
DOI:
10.1143/APEX.3.101003
Date:
October, 2010
File:
PDF, 273 KB
english, 2010