[IEEE 2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2016.4.25-2016.4.27)] 2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Comprehensive study of intrinsic unipolar SiOx-based ReRAM characteristics in AC frequency response and low voltage ( 2V) operation
Chen, Ying-Chen, Chang, Yao-Feng, Fowler, Burt, Zhou, Fei, Wu, Xiaohan, Hsieh, Cheng-Chih, Chang, Heng-Lu, Pan, Chih-Hung, Chen, Min-Chen, Chang, Kuan-Chang, Tsai, Tsung-Ming, Chang, Ting-Chang, Lee,Year:
2016
Language:
english
DOI:
10.1109/vlsi-tsa.2016.7480497
File:
PDF, 920 KB
english, 2016