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Improvement of Bipolar Switching Properties of Gd:SiOx RRAM Devices on Indium Tin Oxide Electrode by Low-Temperature Supercritical CO2 Treatment
Chen, Kai-Huang, Chang, Kuan-Chang, Chang, Ting-Chang, Tsai, Tsung-Ming, Liang, Shu-Ping, Young, Tai-Fa, Syu, Yong-En, Sze, Simon M.Volume:
11
Language:
english
Journal:
Nanoscale Research Letters
DOI:
10.1186/s11671-016-1272-5
Date:
December, 2016
File:
PDF, 1.81 MB
english, 2016