Reduction in threading dislocation density in ge epitaxial...

Journal of the Korean Physical Society 2015 / 11 Vol. 67; Iss. 9

Reduction in threading dislocation density in ge epitaxial layers grown on Si(001) substrates by using rapid thermal annealing

Shin, Keun Wook, Park, Sung Hyun, Park, Sehun, Yoon, Euijoon, Oh, Sewoung, Park, Yongjo
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Volume:
67
Language:
english
Journal:
Journal of the Korean Physical Society
DOI:
10.3938/jkps.67.1646
Date:
November, 2015
File:
PDF, 680 KB
english, 2015
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