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Control of electrical properties in Heusler-alloy/Ge Schottky tunnel contacts by using phosphorous δ-doping with Si-layer insertion
Yamada, Michihiro, Fujita, Yuichi, Yamada, Shinya, Kanashima, Takeshi, Sawano, Kentarou, Hamaya, KoheiLanguage:
english
Journal:
Materials Science in Semiconductor Processing
DOI:
10.1016/j.mssp.2016.07.025
Date:
August, 2016
File:
PDF, 725 KB
english, 2016