Dislocation Reduction and Stress Relaxation of GaN and...

ACS Applied Materials & Interfaces 2016 / 08 Vol. 8; Iss. 33

Dislocation Reduction and Stress Relaxation of GaN and InGaN Multiple Quantum Wells with Improved Performance via Serpentine Channel Patterned Mask

Ji, Qingbin, Li, Lei, Zhang, Wei, Wang, Jia, Liu, Peichi, Xie, Yahong, Yan, Tongxing, Yang, Wei, Chen, Weihua, Hu, Xiaodong
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Volume:
8
Language:
english
Journal:
ACS Applied Materials & Interfaces
DOI:
10.1021/acsami.6b07044
Date:
August, 2016
File:
PDF, 4.52 MB
english, 2016
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