[IEEE 2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2016.4.25-2016.4.27)] 2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Deep understanding of random telegraph noise (RTN) effects on SRAM stability
Mao, Dongyuan, Guo, Shaofeng, Wang, Runsheng, Luo, Mulong, Huang, RuYear:
2016
Language:
english
DOI:
10.1109/vlsi-tsa.2016.7480513
File:
PDF, 927 KB
english, 2016