Analytical model of LDMOS with a double step buried oxide...

Solid-State Electronics 2016 / 09 Vol. 123

Analytical model of LDMOS with a double step buried oxide layer

Yuan, Song, Duan, Baoxing, Cao, Zhen, Guo, Haijun, Yang, Yintang
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Volume:
123
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2016.05.007
Date:
September, 2016
File:
PDF, 637 KB
english, 2016
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